Nanoscale Surface and Sub-Surface Chemical Analysis of SiGe Nanowires
نویسندگان
چکیده
Si/Si1-xGex axial heterostructured nanowires (hNW) are under investigation for downscaling of metaloxide-semiconductor field-effect transistors (MOSFETs). New architectures based on vertically aligned nanowires tunnel-FETs are promising candidates for reduced power dissipation and low voltage operation [1]. The axial growth of lattice mismatched heterostructures would allow band-gap engineering along the charge transport direction. Adequate control of the chemical composition along axial and radial directions is of upmost importance for this band-gap engineering.
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